PART |
Description |
Maker |
ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220J |
280W GaN WIDEBAND PULSED POWER
|
RF Micro Devices
|
RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
RF3933 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
RFHA1000 |
15W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
MAGX-001214-500L00-V2 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
MAGX-003135-SB5PPR MAGX-003135-120L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
MAGX-001214-250L00 MAGX-001214-SB1PPR MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
UPC1688G UPC1688G-T1 UPC1688G-T2 UPC1688G-T2-A |
1100 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER MINIMOLD, 4 PIN IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOT-143R,4PIN,PLASTIC 5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC 5伏,1.1 GHz的宽频带及平坦增益放大器单片
|
NEC[NEC] NEC Electronics Corp NEC Corp. NEC, Corp.
|
1214-110V |
Pulsed Power L-Band (Si)
|
Microsemi
|